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EspañolDRIFT-FIELD TRANSISTOR
The 'drift-field transistor', also called the 'drift transistor' or 'graded base transistor', is a type of high-speed bipolar junction transistor having a doping-engineered electric field in the base to reduce the charge carrier base transit time.
Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.
★ ''Herb’s Bipolar Transistors'' IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001 PDF
★ Influence of Mobility and Lifetime Variations on Drift-Field Effects in Silicon-Junction Devices PDF
Invented by Herbert Kroemer at the Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.
| Contents |
| External links |
External links
★ ''Herb’s Bipolar Transistors'' IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001 PDF
★ Influence of Mobility and Lifetime Variations on Drift-Field Effects in Silicon-Junction Devices PDF
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