SIMON SZE

'Simon Min Sze' is an electrical engineer. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of NCTU. He is well-known for his work in semiconductor physics and technology, including his discovery with Dawon Kahng of the floating-gate transistor^[1], now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including ''Physics of Semiconductor Devices'', one of the most-cited texts in its field. Sze received the J. J. Ebers Award in 1991 for his work in electron devices.^[2]

Contents

Bibliography

References

Bibliography

★ ''Physics of Semiconductor Devices'', S. M. Sze. New York: Wiley, 1969, ISBN 0-471-84290-7; 2nd ed., 1981, ISBN 0-471-05661-8; 3rd ed., with Kwok K. Ng, 2006, ISBN 0-471-14323-5.

★ ''Semiconductor Devices: Physics and Technology'', S. M. Sze. New York: Wiley, 1985; 2nd ed., 2001, ISBN 0-471-33372-7.

★ ''VLSI Technology'', ed. S. M. Sze. New York: McGraw-Hill, 1983, ISBN 0-07-062686-3; 2nd ed., 1988, ISBN 0-07-062735-5.

References

1. D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, ''The Bell System Technical Journal'', '46', #4 (1967), pp. 1288–1295.
2. ''Electron Devices Society J.J. Ebers Award, web page at the IEEE, accessed 11-I-2007.